Infineon ITD50N04S4L-07: High-Performance 40V N-Channel MOSFET for Advanced Power Management

Release date:2025-11-05 Number of clicks:102

Infineon ITD50N04S4L-07: High-Performance 40V N-Channel MOSFET for Advanced Power Management

In the realm of modern power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon ITD50N04S4L-07 stands out as a high-performance 40V N-Channel MOSFET engineered to meet these demanding requirements. Designed with Infineon’s advanced OptiMOS™ technology, this power MOSFET is optimized for a wide range of applications, including DC-DC conversion, motor control, and load switching systems, where low losses and high power density are critical.

A key highlight of the ITD50N04S4L-07 is its exceptionally low on-state resistance (RDS(on)), which is rated at just 0.7 mΩ maximum at 10 V. This ultra-low resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation. Such performance is especially beneficial in high-current applications such as battery management systems (BMS) and power supplies, where energy savings and thermal management are crucial.

The device also features low gate charge (Qg) and outstanding switching characteristics, enabling faster switching frequencies and reduced dynamic losses. This makes it suitable for high-frequency switch-mode power supplies (SMPS) and synchronous rectification circuits. Additionally, its enhanced body diode robustness ensures reliable operation in inductive load environments, further increasing system durability.

Packaged in a D2PAK-7 (TO-263-7) housing, the MOSFET offers improved thermal conductivity and power dissipation capability. The package design supports easier PCB layout optimization for high-current paths and simplifies thermal management with its efficient cooling interface.

ICGOOODFIND:

The Infineon ITD50N04S4L-07 sets a high standard for power MOSFETs with its ultra-low RDS(on), excellent switching performance, and robust construction. It is an ideal solution for advanced power management applications requiring high efficiency and thermal stability.

Keywords:

Power MOSFET, Low RDS(on), OptiMOS™, DC-DC Conversion, Thermal Performance

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