Infineon S29GL064N90FAI010 64Mb 3.0V Flash Memory Chip Technical Overview

The Infineon S29GL064N90FAI010 is a high-performance 64-megabit (8MB) 3.0V-only flash memory device manufactured on 90nm MirrorBit® process technology. This chip represents a reliable non-volatile memory solution designed for a wide range of embedded applications, including networking equipment, telecommunications systems, industrial controllers, and automotive electronics.

A key architectural feature of this family is its symmetric 128KB sectors, all of which support full erase and programming operations at a single 3.0-volt power supply. This eliminates the need for an additional high-voltage supply, simplifying system power design. The device is organized as 4,194,304 words of 16 bits each or 8,388,608 bytes of 8 bits each, providing design flexibility for both 16-bit and 8-bit data bus microprocessors.

Performance is a critical strength of this memory chip. It offers fast access times as low as 90ns, enabling efficient system operation with minimal wait states. For programming, it utilizes a highly efficient Word-by-Word (16-bit) programming algorithm, significantly accelerating the process of writing data compared to older byte-by-byte methods. The entire chip can be erased in a single operation, or individual sectors can be erased independently, allowing specific memory blocks to be updated without disturbing others.

The S29GL064N integrates several advanced features for enhanced functionality and system integration. It includes a VersatileI/O™ (VIO) control that allows the host system to adjust the output drive levels, enabling direct interface with processors using voltages from 1.65V to 3.6V. This feature is crucial for mixed-voltage systems. Furthermore, it supports common flash memory interface (CFI), which allows the host system to automatically query the device to discover its configuration, voltage, and timing parameters.

Device reliability is ensured through built-in program and erase suspend commands. These commands allow the system to temporarily halt an ongoing programming or erase operation to read data from any other sector within the array, a vital feature for real-time systems that cannot tolerate long blocking delays. The chip also offers robust data protection with both hardware and software security features, including a temporary sector unprotect mode for secure code updates.

ICGOOODFIND: The Infineon S29GL064N90FAI010 stands out as a robust, high-performance, and flexible 3.0V flash memory solution. Its combination of a modern 90nm process, fast access times, advanced sector protection, and versatile I/O control makes it an excellent choice for demanding embedded systems requiring reliable non-volatile storage.

Keywords:

1. Non-volatile Memory

2. 3.0V-only Supply

3. 90nm MirrorBit® Process

4. Sector Erase Architecture

5. VersatileI/O™ (VIO) Control