BSC0909NS: Infineon's High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion

Release date:2025-11-05 Number of clicks:202

BSC0909NS: Infineon's High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion

In the relentless pursuit of higher efficiency and power density in modern electronics, the choice of power switching components is paramount. The BSC0909NS from Infineon Technologies stands out as a premier solution, encapsulating the advanced OptiMOS 5 technology to set a new benchmark in power conversion performance.

This 40V N-channel MOSFET is engineered for demanding applications, including synchronous rectification in SMPS, motor drives, and DC-DC converters. Its core advantage lies in its exceptionally low figure-of-merit (FOM), achieved by optimizing the trade-off between on-state resistance (R DS(on)) and gate charge (Q G). The BSC0909NS boasts an ultra-low R DS(on) of just 0.9 mΩ (max. at V GS = 10 V), which directly translates to minimized conduction losses. This allows for more current to be handled with significantly reduced heat generation, enabling designers to create more compact systems or push existing designs to higher power levels.

Complementing its low conduction loss is its superior switching performance. The reduced gate charge ensures swift turn-on and turn-off transitions, which is critical for high-frequency operation. This leads to a substantial reduction in switching losses, a dominant factor in many power conversion topologies. The combination of these factors results in unparalleled efficiency across a wide load range, making it an ideal candidate for energy-conscious applications from enterprise computing to renewable energy systems.

Furthermore, the device features a low thermal resistance and an industry-standard SuperSO8 package, ensuring robust power dissipation and reliability. Its high body diode ruggedness also enhances performance in synchronous rectification stages.

ICGOOODFIND: The Infineon OptiMOS 5 BSC0909NS is a superior power MOSFET that delivers a winning combination of ultra-low R DS(on) and exceptional switching performance. It is a key enabler for achieving peak efficiency, higher power density, and improved thermal management in a wide array of modern power conversion designs.

Keywords: OptiMOS 5, Low R DS(on), High-Efficiency, Power Conversion, Synchronous Rectification.

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